? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 82 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c 100 a e as t c = 25 c5j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 50a, note 1 49 m hiperfet tm power mosfet q3-class IXFN100N50Q3 v dss = 500v i d25 = 82a r ds(on) 49m t rr 250ns ds100308(03/11) n-channel enhancement mode fast intrinsic rectifier features z international standard package z low intrinsic gate resistance z minibloc with aluminum nitride isolation z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls advance technical information minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal.
IXFN100N50Q3 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 50a, note 1 40 65 s c iss 13.8 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1690 pf c rss 177 pf r gi gate input resistance 0.12 t d(on) 40 ns t r 20 ns t d(off) 50 ns t f 15 ns q g(on) 255 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 50a 110 nc q gd 115 nc r thjc 0.13 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 100 a i sm repetitive, pulse width limited by t jm 400 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 3.5 c i rm 30.0 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 50a r g = 0.5 (external) i f = 50a, -di/dt = 200a/ s v r = 100v, v gs = 0v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. (m4 screws (4x) supplied) sot-227b (ixfn) outline
? 2011 ixys corporation, all rights reserved IXFN100N50Q3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ds - volts i d - amperes v gs = 10v 9v 8 v 7 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7 v 9 v 8 v 6 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 01234567891011 v ds - volts i d - amperes 6 v 7v 5v v gs = 10v 8v fig. 4. r ds(on) normalized to i d = 50a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 100a i d = 50a fig. 5. r ds(on) normalized to i d = 50a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFN100N50Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 20 40 60 80 100 120 140 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v gs - volts v ds = 250v i d = 50a i g = 10ma fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms r ds(on) limit 250s
? 2011 ixys corporation, all rights reserved ixys ref: f_100n50q3(q9)02-24-11 IXFN100N50Q3 fig. 13. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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